-
1
-
-
63449119273
-
-
B. Jean and T. Bende: Mid-IR Laser Applications in Medicine, in: Solid-State Mid-Infrared Laser Sources, eds I. T. Sorokina, K. L. Vodopyanov, Topics in Applied Physics, no. 89, pp. 511, 2003
-
B. Jean and T. Bende: Mid-IR Laser Applications in Medicine, in: Solid-State Mid-Infrared Laser Sources, eds I. T. Sorokina, K. L. Vodopyanov, Topics in Applied Physics, no. 89, pp. 511, 2003
-
-
-
-
2
-
-
0037097850
-
2+:CdMnTe
-
2+:CdMnTe, Opt. Lett. 27, p. 1034, 2002
-
(2002)
Opt. Lett
, vol.27
, pp. 1034
-
-
Mond, M.1
Albrecht, D.2
Heumann, E.3
Huber, G.4
Kück, S.5
Levchenko, V.6
Yakimovich, V.7
Shcherbitsky, V.8
Kisel, V.9
Kuleshov, N.10
Rattunde, M.11
Schmitz, J.12
Kiefer, R.13
Wagner, J.14
-
3
-
-
0029379526
-
Ho: YAG laser pumped by 1.9 μm diode
-
C. Nabors, J. Ochoa, T. Fan, A. Sanchez, H. Choi, G. Turner, Ho: YAG laser pumped by 1.9 μm diode, IEEE J. Quantum Electron. 31, 1603, 1995
-
(1995)
IEEE J. Quantum Electron
, vol.31
, pp. 1603
-
-
Nabors, C.1
Ochoa, J.2
Fan, T.3
Sanchez, A.4
Choi, H.5
Turner, G.6
-
4
-
-
0031548531
-
4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
-
D. Z. Garbuzov, R. U. Martinelli, H. Lee, R. J. Menna, P. K. York, L. A. DiMarco, M. G. Harvey, R. J. Matarese, S. Y. Narayan, and J. C. Connolly, 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes, Appl. Phys. Lett. 70, p. 2931, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 2931
-
-
Garbuzov, D.Z.1
Martinelli, R.U.2
Lee, H.3
Menna, R.J.4
York, P.K.5
DiMarco, L.A.6
Harvey, M.G.7
Matarese, R.J.8
Narayan, S.Y.9
Connolly, J.C.10
-
5
-
-
0001424246
-
Antimonite-based mid-infrared quantum well diode lasers
-
ed. M. O. Manasreh, Gordon and Beach, Amsterdam, p
-
G. W. Turner, H. K. Choi, Antimonite-based mid-infrared quantum well diode lasers, in: Optoelectronic Properties of Semiconductors and Superlattices, ed. M. O. Manasreh, Gordon and Beach, Amsterdam, p. 369, 1997
-
(1997)
Optoelectronic Properties of Semiconductors and Superlattices
, pp. 369
-
-
Turner, G.W.1
Choi, H.K.2
-
6
-
-
3042644556
-
Comprehensive analysis of the internal losses in 2.0 μm (Al-GaIn)(AsSb) quantum-well diode lasers
-
M. Rattunde, J. Schmitz, R. Kiefer, J. Wagner, Comprehensive analysis of the internal losses in 2.0 μm (Al-GaIn)(AsSb) quantum-well diode lasers, Appl. Phys. Lett. 84, p. 4750, 2004
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 4750
-
-
Rattunde, M.1
Schmitz, J.2
Kiefer, R.3
Wagner, J.4
-
7
-
-
79956054825
-
Room-temperature 2.5 μm In-GaAsSb/AlGaAsSb diode lasers emitting 1 W continuous wave
-
J. Kim, L. Shterengas, R. Martinelli, G. Belenky, D. Garbuzov, W. Chan, Room-temperature 2.5 μm In-GaAsSb/AlGaAsSb diode lasers emitting 1 W continuous wave, Appl. Phys. Lett. 81, p. 3146, 2002
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 3146
-
-
Kim, J.1
Shterengas, L.2
Martinelli, R.3
Belenky, G.4
Garbuzov, D.5
Chan, W.6
-
8
-
-
5444244502
-
High-Power 2.3-μm GaSb-Based Linear Laser Array
-
L. Shterengas, G. L. Belenky, A. Gourevitch, D. Donetsky, J. G. Kim, R. U. Martinelli, D. Westerfeld, High-Power 2.3-μm GaSb-Based Linear Laser Array, IEEE Photon. Techn. Lett., Vol. 16, no. 10, pp. 2218-2220, 2004
-
(2004)
IEEE Photon. Techn. Lett
, vol.16
, Issue.10
, pp. 2218-2220
-
-
Shterengas, L.1
Belenky, G.L.2
Gourevitch, A.3
Donetsky, D.4
Kim, J.G.5
Martinelli, R.U.6
Westerfeld, D.7
-
9
-
-
33646752683
-
High-power diode laser arrays at 2 μm for materials processing
-
Munich, pp
-
M. T. Kelemen, J. Weber, M. Rattunde, C. Pfahler, G. Kaufel, R. Moritz, C. Manz, M. Mikulla, and J. Wagner, High-power diode laser arrays at 2 μm for materials processing, Proc. LIM 2005, Munich, pp. 713-718, 2005
-
(2005)
Proc. LIM
, pp. 713-718
-
-
Kelemen, M.T.1
Weber, J.2
Rattunde, M.3
Pfahler, C.4
Kaufel, G.5
Moritz, R.6
Manz, C.7
Mikulla, M.8
Wagner, J.9
-
10
-
-
21844480076
-
GaSb-based 1.9-2.4 μm quantum-well diode lasers with low beam divergence
-
Paper 19
-
M. Rattunde, E. Geerlings, J. Schmitz, G. Kaufel, J. Weber, M. Mikulla, J. Wagner, GaSb-based 1.9-2.4 μm quantum-well diode lasers with low beam divergence, SPIE Proc, Vol. 5738, Paper 19, 2005
-
(2005)
SPIE Proc
, vol.5738
-
-
Rattunde, M.1
Geerlings, E.2
Schmitz, J.3
Kaufel, G.4
Weber, J.5
Mikulla, M.6
Wagner, J.7
-
11
-
-
33644527588
-
GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power
-
M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power, Appl. Phys. Lett. 88, 081115, 2006
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 081115
-
-
Rattunde, M.1
Schmitz, J.2
Kaufel, G.3
Kelemen, M.4
Weber, J.5
Wagner, J.6
-
12
-
-
0036060947
-
Sb-based mid infrared diode lasers
-
C. Mermelstein, M. Rattunde, J. Schmitz, S. Simanowski, R. Kiefer, M. Walther, and J. Wagner, Sb-based mid infrared diode lasers, Mat. Res. Soc. Symp., Proc. 692, p. 365, 2002.
-
(2002)
Mat. Res. Soc. Symp., Proc
, vol.692
, pp. 365
-
-
Mermelstein, C.1
Rattunde, M.2
Schmitz, J.3
Simanowski, S.4
Kiefer, R.5
Walther, M.6
Wagner, J.7
-
13
-
-
21844479817
-
-
Paper 82
-
J. Wagner, E. Geerlings, G. Kaufel, M.T. Kelemen, C. Manz, C. Pfahler, M. Rattunde, J. Schmitz, (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality, SPIE Proc. Vol. 5732, Paper 82, 2005
-
(2005)
(AlGaIn)(AsSb) quantum well diode lasers with improved beam quality, SPIE Proc
, vol.5732
-
-
Wagner, J.1
Geerlings, E.2
Kaufel, G.3
Kelemen, M.T.4
Manz, C.5
Pfahler, C.6
Rattunde, M.7
Schmitz, J.8
-
14
-
-
33646739094
-
High-power diode laser arrays emitting at 2 μm with reduced far-field angle
-
Paper 45
-
M.T. Kelemen, J. Weber, M. Rattunde, G. Kaufel, R. Moritz, J. Schmitz, J. Wagner, High-power diode laser arrays emitting at 2 μm with reduced far-field angle, SPIE Proc. Vol. 6133, Paper 45, 2006
-
(2006)
SPIE Proc
, vol.6133
-
-
Kelemen, M.T.1
Weber, J.2
Rattunde, M.3
Kaufel, G.4
Moritz, R.5
Schmitz, J.6
Wagner, J.7
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