Edge and vertical surface emitting lasers around 2.0-2.5 μm and their applications

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences

Volumn 359, Issue 1780, 2001, Pages 581-597

  Rouillard, Y ^a   Genty, F ^a   Perona A ^a   Vicet, A ^a   Yarekha, D A ^a   Boissier, G ^a   Grech, P ^a   Baranov, A N ^a   Alibert, C ^a   Wagner, J ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

GaInAsSb; Methane; Mid infrared; Semiconductor laser; Tunable diode laser absorption spectroscopy

Indexed keywords

EID: 9644255111     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.2000.0744     Document Type: Conference Paper

References (15)

1. Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
2. Sb-based monolithic VCSEL operating near 2.2 μm at room temperature
3. Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbers
4. Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
5. 2.3-2.7 μm room temperature cw operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
6. High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers
7. The temperature and pressure dependence of refractive indices of some III-V and II-VI binary semiconductors
8. High speed data acquisition and control system for diode laser spectroscopy and diode laser based analytical applications
9. Introduction to environmental sensing
10. High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary
11. Room temperature GaInAsSb/GaSb quantum well for tunable diode laser absorption spectroscopy
12. High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 μm
13. High efficiency GaInSbAs/GaAlSbAs type 10-II quantum-well continuous wave lasers