Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3-2.7 μm laser structures

Journal of Crystal Growth

Volumn 209, Issue 1, 2000, Pages 15-20

  Simanowski, S ^a   Herres, N ^a   Mermelstein, C ^a   Kiefer, R ^a   Schmitz, J ^a   Walther, M ^a   Wagner, J ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

ALUMINUM GALLIUM ARSENIC ANTIMONIDE; GALLIUM INDIUM ARSENIC ANTIMONIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033898307     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00376-0     Document Type: Article

References (8)

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