TEM observation of Eu-doped GaN and fabrication of n-GaN/Eu:GaN/p-GaN structure

Optical Materials

Volumn 28, Issue 6-7, 2006, Pages 759-762

  Sawahata, J ^a   Bang, H ^a,b   Seo, J W ^a   Tsukamoto, T ^a   Akimoto, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROMAGNETIC WAVE DIFFRACTION; EUROPIUM; HETEROJUNCTIONS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPE; RECTIFICATION BEHAVIOR; STACKING IRREGULARITY;

GALLIUM NITRIDE;

EID: 33644891899     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2005.09.016     Document Type: Conference Paper

References (10)

1. S.C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten J. Appl. Phys. 87 2000 965
2. S. Nakamura Science 281 1998 965
3. S. Nakamura, and G. Fasol The Blue Laser Diodes 1997 Springer Heidelberg
4. A. Kaneta, D. Yamada, C. Marutsuki, Y. Narukawa, T. Mukai, and Y. Kawakami Phys. Stat. Sol. (c) 2 2005 2728
5. M.C. Cheng, G. Namkoong, F. Chen, M. Furis, H.E. Pudavar, A.N. Vartwright, and W.A. Doolittle Phys. Stat. Sol. (c) 2 2005 2779
6. B. Goldbenderg, J. David Zook, and R.J. Ulmer Appl. Phys. Lett. 62 1993 381
7. J. Heikenfeld, M. Garter, D.S. Lee, R. Birkhahn, and A.J. Steckl Appl. Phys. Lett. 75 1999 1189
8. S. Morishima, T. Maruyama, and K. Akimoto J. Cryst. Growth 209 2000 378
9. H. Bang, S. Morishima, Z. Li, K. Akimoto, M. Nomura, and E. Yagi J. Cryst. Growth 237 2002 1027
10. Z. Li, H. Bang, G. Piao, J. Sawahata, and K. Akimoto J. Cryst. Growth 240 2002 382