Reorientation of the high mobility plane in pentacene-based carbon nanotube enabled vertical field effect transistors

ACS Nano

Volumn 5, Issue 1, 2011, Pages 291-298

  McCarthy, Mitchell A ^a   Liu, Bo ^b   JayaRaman, Ramesh ^a   Gilbert, Stephen M ^b   Kim, Do Young ^a   So, Franky ^a   Rinzler, Andrew G ^b  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

Carbon nanotube; Low voltage; Vertical field effect transistor; X ray diffraction

Indexed keywords

CHANNEL MATERIALS; CURRENT FLOWS; DIELECTRIC SURFACE; HIGH MOBILITY; LARGE ANISOTROPY; LARGE CURRENT DENSITY; LOW VOLTAGES; MOLECULAR ORDERING; ORGANICS; SUBSTRATE SURFACE; VERTICAL FIELDS;

CARBON NANOTUBES; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; SURFACES; X RAY DIFFRACTION;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79955542583     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn102721v     Document Type: Article

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