Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7423-7427

  Han, Xiang Lei ^a   Larrieu, Guilhem ^a   Dubois, Emmanuel ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Electron beam lithography; Reactive ion etching (RIE); Vertical silicon nanowires; Wet oxidation

Indexed keywords

1D STRUCTURES; BEAM SIZE; CHLORINE-BASED PLASMA; DEFECTS INDUCED; E-BEAM LITHOGRAPHY; E-BEAM RESIST; ETCHING ANISOTROPY; HIGH ACCELERATION; HIGH ASPECT RATIO; HIGH CONTRAST; LOW PRESSURES; NANOPILLARS; NEGATIVE TONES; PRECISE CONTROL; REACTIVE-ION-ETCHING (RIE); SELF-LIMITED; SI SURFACES; SILICON NANOWIRES; TETRAMETHYL AMMONIUM HYDROXIDE; TOP-DOWN APPROACH; ULTRAHIGH DENSITY; VERTICAL SILICON NANOWIRES; WET OXIDATION;

ASPECT RATIO; CHLORINE; ELECTRON BEAM LITHOGRAPHY; IONS; NANOWIRES; OXIDATION; PRESSURE EFFECTS; SURFACE DEFECTS;

REACTIVE ION ETCHING;

EID: 79955535918     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2841     Document Type: Conference Paper

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