Modeling interconnects for post-CMOS devices and comparison with copper interconnects

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1319-1328

  Rakheja, Shaloo ^a   Naeemi, Azad ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Alternate state variable; excitons; interconnects; plasmonics; spintronics

Indexed keywords

COMPARISON RESULT; COPPER INTERCONNECTS; ELECTRON CHARGE; ELECTRON SPINS; ENERGY-PER-BIT; INDIRECT EXCITONS; INTERCONNECTS; MOORE'S LAW; PLASMONICS; POST-CMOS; POWER DISSIPATION; QUANTUM-MECHANICAL TUNNELING; SPINTRONICS; STATE VARIABLES; SUBTHRESHOLD LEAKAGE CURRENT;

CMOS INTEGRATED CIRCUITS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ENERGY DISSIPATORS; EXCITONS; GRAPHENE; LEAKAGE CURRENTS; NANOTECHNOLOGY; PLASMONS;

FIELD EFFECT TRANSISTORS;

EID: 79955531831     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2109004     Document Type: Article

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