Investigating the stability of thin film transistors with zinc oxide as the channel layer

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 467-471

  Cross, R B M ^a   De Souza, M M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ESTIMATION; GATE DIELECTRICS; SURFACE DEFECTS; TEMPERATURE MEASUREMENT; ZINC OXIDE;

CHANNEL LAYERS; DEVICE INSTABILITY; GATE BIAS STRESSING; SUBTHRESHOLD BEHAVIOR;

THIN FILM TRANSISTORS;

EID: 34548755611     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369935     Document Type: Conference Paper

References (7)

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