Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Mizunuma, K ^a   Ikeda, S ^a   Sato, H ^a   Yamanouchi, M ^a   Gan, H D ^a   Miura, K ^a,b   Yamamoto, H ^b   Hayakawa, J ^b   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR ANISOTROPY; STACK STRUCTURE; TUNNEL MAGNETORESISTANCE;

ANISOTROPY; COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETIC PROPERTIES; MAGNETOELECTRONICS; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 79955458474     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3554092     Document Type: Conference Paper

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