Structural and optoelectronic characteristics of well-aligned ZnO nanorod arrays for photodiodes

Journal of Nanoelectronics and Optoelectronics

Volumn 5, Issue 3, 2010, Pages 295-299

  Ji, Liang Wen ^a   Fang, Te Hua ^a,b   Wu, Cheng Zhi ^a   Chu, Tung Te ^c   Jiang, Huilin ^c   Chang, Shoou Jinn ^d   Peng, Shi Ming ^d   Zhong, Jingchang ^c   Chang, Wen Yang ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Liquid phase deposition; Nanorod; Photodiodes; Photoluminescence; ZnO

Indexed keywords

APPLIED BIAS; C-AXIS DIRECTION; INCIDENT WAVELENGTH; LIQUID-PHASE-DEPOSITION; MICRO RAMAN SPECTROSCOPY; OPTOELECTRONIC CHARACTERISTICS; PHOTORESPONSIVITY; SCANNING ELECTRONS; SCHOTTKY-BARRIER PHOTODIODE; WELL-ALIGNED; WURTZITE STRUCTURE; ZNO; ZNO NANOROD;

LIQUIDS; PHOTODIODES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

NANORODS;

EID: 79955446821     PISSN: 1555130X     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2010.1113     Document Type: Article

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