Grain boundary effect on charge transport in pentacene thin films

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Weis, Martin ^a   Gmucová, Katarína ^a   Nádaždy, Vojtech ^a   Majková, Eva ^a   Haško, Daniel ^b   Taguchi, Dai ^c   Manaka, Takaaki ^c   Iwamoto, Mitsumasa ^c  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b INTERNATIONAL LASER CENTER   (Slovakia)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE GRAIN SIZE; CHARGE TRANSFER EXCITONS; CHARGE TRANSPORT; CHARGE TRANSPORT PROPERTIES; EFFECTIVE MOBILITIES; GRAIN BOUNDARY EFFECTS; GRAIN SIZE; PENTACENE THIN FILMS; POLYCRYSTALLINE PENTACENE; PREPARATION TECHNOLOGY; STEADY-STATE VOLTAMMETRY;

CHARGE TRANSFER; DEFECT DENSITY; DEFECTS; FIELD EFFECT TRANSISTORS; FILM PREPARATION; GRAIN BOUNDARIES; ION EXCHANGE; ORGANIC FIELD EFFECT TRANSISTORS; OXYGEN; SEMICONDUCTING ORGANIC COMPOUNDS; TRANSPORT PROPERTIES;

GRAIN SIZE AND SHAPE;

EID: 79955440938     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DK03     Document Type: Article

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