Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

Applied Physics Letters

Volumn 98, Issue 16, 2011, Pages

  Drachenko, O ^a   Patane A ^b   Kozlova, N V ^c   Zhuang, Q D ^d   Krier, A ^d   Eaves, L ^b   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c Institute for Metallic Materials   (Germany)

^d LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; ELECTRON DENSITIES; FERMI ENERGY PINNING; GAAS; INAS; INTERBAND; MIDINFRARED; PHOTOLUMINESCENCE EMISSION; PHOTON SOURCES; RED SHIFT; TERA HERTZ;

CARRIER CONCENTRATION; CYCLOTRON RESONANCE; CYCLOTRONS; FERMI LEVEL; INDIUM ARSENIDE; MAGNETIC FIELDS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM;

CERIUM ALLOYS;

EID: 79955416774     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3583378     Document Type: Article

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