High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices

IEEE Journal of Quantum Electronics

Volumn 46, Issue 1, 2010, Pages 116-120

  Shin, Young Chul ^a   Kim, Dong Ho ^a   Kim, Eun Hong ^a   Park, Joong Mok ^b   Ho, Kai Ming ^b   Constant, Kristen ^c   Choe, Jong Ho ^a   Han Park, Q ^a   Ryu, Han Youl ^d   Baek, Jong Hyeob ^e   Jung, Tak ^e   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

^b IOWA STATE UNIVERSITY   (United States)

^c Iowa State University of Science and Technology   (United States)

^d Inha University   (South Korea)

^e Korean Photonics Technology Institute   (South Korea)

Author keywords

Index terms finite difference time domain method; Light extraction efficiency; Light emitting diode; Nitride based semiconductor; Photonic crystal

Indexed keywords

3-DIMENSIONAL; ETCH DEPTH; EXTRACTION EFFICIENCIES; GAN LIGHT-EMITTING DIODES; HIGH EFFICIENCY; INDEX TERMS; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; INGAN/GAN; LASER HOLOGRAPHY; LEAKY MODES; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; MULTIPLE QUANTUM WELLS; SEMICONDUCTOR PHOTONIC CRYSTALS; SQUARE LATTICES; SURFACE RECOMBINATIONS; THEORETICAL STUDY; TWO-DIMENSIONAL PHOTONIC CRYSTALS;

CRYSTAL LATTICES; DIODES; EXTRACTION; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LASER RECORDING; LIGHT EMISSION; LIGHT EMITTING DIODES; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL;

PHOTONIC CRYSTALS;

EID: 77949473416     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2030150     Document Type: Article

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