Silicide Engineering to Boost Si tunnel transistor drive current

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Leonelli, Daniele ^a,b   Vandooren, Anne ^a   Rooyackers, Rita ^a   Verhulst, Anne S ^a   De Gendt, Stefan ^a,b   Heyns, Marc M ^a,b   Groeseneken, Guido ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; DOPANT SEGREGATION; FIN WIDTHS; GATE BIAS; HIGH-K DIELECTRIC; METAL GATE; MULTIPLE GATES; ON STATE CURRENT; ON-CURRENTS; SUBTHRESHOLD SWING; TCAD SIMULATION; TRANSPORT MECHANISM; TRAP ASSISTED TUNNELING; TUNNEL FIELD EFFECT TRANSISTOR; TUNNEL TRANSISTORS;

DIELECTRIC MATERIALS; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); SILICIDES;

TEMPERATURE MEASUREMENT;

EID: 79955379415     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DC05     Document Type: Article

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