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Volumn 114-115, Issue SPEC. ISS., 2004, Pages 29-41

Ni based suicides for 45 nm CMOS and beyond

(12) Lauwers, Anne a Kittl, Jorge A b Van Dal, Mark J H a Chamirian, Oxana a Pawlak, Malgorzata A a De Potter, Muriel a Lindsay, Richard a Raymakers, Toon c Pages, Xavier d Mebarki, Bencherki e Mandrekar, Tushar f Maex, Karen a

a IMEC (Belgium)

b TEXAS INSTRUMENTS (Belgium)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

d ASM BELGIUM (Belgium)

e IMEC (Belgium)

f APPLIED MATERIALS INC (United States)

Author keywords

Fully silicided poly gates; Kinetics; Narrow lines; Ni alloy suicide; Ni silicide; SiGe substrate; Thermal stability

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; GROWTH KINETICS; INTERFACES (MATERIALS); MORPHOLOGY; NICKEL ALLOYS; POLYSILICON; PYROLYSIS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMODYNAMIC STABILITY; THIN FILMS;

FULLY SILICIDED POLY GATES; KINETICS; NARROW LINES; NI ALLOY SILICIDES; NI-SILICIDE; SIGE SUBSTRATE;

SILICON COMPOUNDS;

EID: 10644282991 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.07.028 Document Type: Conference Paper

Times cited : (71)

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