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Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 3, 2011, Pages

Fabrication of zno thin-film transistors by chemical vapor deposition method

(5) Alias, Afishah a Hazawa, Kouta a Kawashima, Nobuaki a Fukuda, Hisashi a Uesugi, Katsuhiro a

a MURORAN INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; AQUEOUS SOLUTIONS; BUBBLING METHOD; CHEMICAL VAPOR DEPOSITION METHODS; DEPLETION MODES; DIHYDRATES; ENHANCEMENT MODES; LINEARLY PROPORTIONAL; OPERATIONAL MODES; SATURATION MOBILITY; SILICON SUBSTRATES; THERMAL CHEMICAL VAPOR DEPOSITION; ZINC ACETATE; ZNO; ZNO FILMS; ZNO THIN FILM;

GROWTH TEMPERATURE; METALLIC FILMS; OPTICAL FILMS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 79955161412 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.01BG05 Document Type: Conference Paper

Times cited : (13)

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