Characterization of the InGaN/GaN multi-quantum-wells light-emitting diode grown on patterned sapphire substrate with wide electroluminescence spectrum

Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 2, 2011, Pages

  Lee, Ah Reum ^a   Jeon, Hunsoo ^a   Lee, Gang Seok ^a   Ok, Jin Eun ^a   Jo, Dong Wan ^a   Kim, Kyoung Hwa ^a   Yi, Sam Nyung ^a   Yang, Min ^a   Ahn, Hyung Soo ^a   Cho, Chae Ryong ^a   Kim, Suok Whan ^b   Lee, Jae Hak ^c   Ha, Hong Ju ^d  

^a Pusan National University   (South Korea)

^b Andong National University   (South Korea)

^c THELEDS Co Ltd   (South Korea)

^d CS Sol Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CRYSTAL FACETS; ELECTROLUMINESCENCE SPECTRA; INGAN/GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIQUANTUM WELLS; NONUNIFORMITY; PATTERNED SAPPHIRE SUBSTRATE; SELECTIVE AREA GROWTH; SPECTRAL PEAK; WHITE LED;

ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79955134855     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.01AD06     Document Type: Conference Paper

References (16)

1. X. Zhang, J. Wang, H. Wu, J. Zhang, and Q. Su: Mater. Lett. 63 (2009) 340.
2. Z. Lei, G. Xia, L. Ting, G. Xiaoling, L. Q. Ming, and S. Guangdi: Microelectron. J. 38 (2007) 1.
3. C. R. Lee: J. Cryst. Growth 220 (2000) 62.
4. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797.
5. S.-N. Lee, H. S. Paek, H. Kim, T. Jang, and Y. Park: Appl. Phys. Lett. 92 (2008) 081107.
6. C. B. Soh, W. Liu, J. H. Teng, S. Y. Chow, S. S. Ang, and S. J. Chua: Appl. Phys. Lett. 92 (2008) 261909.
7. U. Kaufmann, M. Kunzer, K. Köhler, H. Obloh, W. Pletschen, P. Schlotter, J. Wagner, A. Ellens, W. Rossner, and M. Kobusch: Phys. Status Solidi A 192 (2002) 246.
8. N. Narendran, Y. Gu, J. P. Freyssinier-Nova, and Y. Zhu: Phys. Status Solidi A 202 (2005) R60.
9. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer: Appl. Phys. Lett. 63 (1993) 2174.
10. C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su: IEEE Photonics Technol. Lett. 18 (2006) 1213.
11. C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu, and C. C. Lin: Mater. Sci. Eng. B 112 (2004) 10.
12. A. Dussaigne, J. Brault, B. Damilano, and J. Massies: Phys. Status Solidi C 4 (2007) 57.
13. S. Nakamura: Diamond Relat. Mater. 5 (1996) 496.
14. C. B. Soh, W. Liu, S. J. Chua, J. H. Teng, R. J. N. Tan, and S. S. Ang: Phys. Status Solidi C 6 (2009) 519.
15. X. H. Wang, H. Q. Jia, L. W. Guo, Z. G. Xing, Y. Wang, X. J. Pei, J. M. Zhou, and H. Chena: Appl. Phys. Lett. 91 (2007) 161912.
16. R. Xia, I. Harrison, E. C. Larkins, A. V. Andrianov, S. R. A. Dods, J. Morgan, P. J. Parbrook, C. C. Button, and G. Hill: Mater. Sci. Eng. B 93 (2002) 234.