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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

Novel tunable phosphor-free white III-nitride light emitting diodes based on indium rich InGaN nanostructures

(6) Soh, C B a Liu, W a Chua, S J a,b Teng, J H a Tan, Rayson J N a Ang, S S a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AVERAGE DIAMETER; BAND FILLINGS; CARRIER TRAPPING; ELECTRON HOLE; EMISSION WAVELENGTH; GAN LAYERS; GROWTH TECHNIQUES; III-NITRIDE; INGAN/GAN QUANTUM WELL; INJECTED CARRIERS; INJECTION CURRENTS; LOWER ENERGIES; PAIR RECOMBINATION; POTENTIAL BARRIERS; QUANTUM WELL LAYERS; RADIATIVE RECOMBINATION; THERMALIZATION; WHITE LIGHT EMITTING DIODES; WHITE-LIGHT GENERATION;

ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; NANOSTRUCTURES; PHOSPHORS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 79251613711 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200880782 Document Type: Article

Times cited : (5)

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