Evaluation of long carrier lifetimes in very thick 4H-SiC epilayers

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 197-200

  Miyazawa, Tetsuya ^a   Ito, Masahiko ^a   Tsuchida, Hidekazu ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

Carrier lifetime; Diffusion constant; Microwave photoconductivity decay; Point defect; Time resolved photoluminescence

Indexed keywords

EPILAYERS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON CARBIDE;

CARBON-IMPLANTATION; DIFFUSION CONSTANT; EPILAYER THICKNESS; LIFETIME MEASUREMENTS; MICROWAVE PHOTOCONDUCTIVITY DECAYS; MINORITY CARRIER LIFETIMES; PHOTOCONDUCTIVE DECAY; TIME-RESOLVED PHOTOLUMINESCENCE;

CARRIER LIFETIME;

EID: 79955106066     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.197     Document Type: Conference Paper

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