The growth and properties of ZnO film on Si(1 1 1) substrate with an AlN buffer by AP-MOCVD

Journal of Luminescence

Volumn 122-123, Issue 1-2, 2007, Pages 905-907

  Jiang, Fengyi ^a   Zheng, Changda ^a   Wang, Li ^a   Fang, Wenqing ^a   Pu, Yong ^a   Dai, Jiangnan ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

AP MOCVD; In situ monitor; Photoluminescence; XRD; ZnO AlN Si film

Indexed keywords

ALUMINUM NITRIDE; ATMOSPHERIC PRESSURE; CRYSTAL GROWTH; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SUBSTRATES;

CRACK DENSITY; EXCITON EMISSION; LASER REFLECTANCE;

ZINC OXIDE;

EID: 33750933943     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.01.322     Document Type: Article

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