Effect of la doping on the electronic structure and optical properties of ZnO

Physica B: Condensed Matter

Volumn 406, Issue 11, 2011, Pages 2314-2318

  Deng, S H ^a   Duan, M Y ^a   Xu, M ^a,b   He, L ^a  

^a SICHUAN NORMAL UNIVERSITY   (China)

^b South west University for Nationalities   (China)

Author keywords

Electronic structure; First principles; La doped ZnO; Optical properties

Indexed keywords

BAND GAPS; BURSTEIN-MOSS EFFECTS; DIELECTRIC FUNCTIONS; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; FIRST-PRINCIPLES; IMAGINARY PARTS; LA DOPING; LA-DOPED ZNO; LEVEL SHIFT; OPTICAL ABSORPTION EDGE; PURE ZNO; ULTRASOFT PSEUDOPOTENTIALS; ZNO;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; LANTHANUM; STRUCTURAL PROPERTIES; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 79955009737     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.03.067     Document Type: Article

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