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Infrared Physics and Technology

Volumn 54, Issue 3, 2011, Pages 310-315

Improvement in performance of high-operating temperature HgCdTe photodiodes

(6) Madejczyk, P a Gawron, W a Piotrowski, A b Klos K b Rutkowski, J a Rogalski, A a

a MILITARY UNIVERSITY OF TECHNOLOGY (Poland)

b VIGO SYSTEM S A (Poland)

Author keywords

Acceptor doping; HgCdTe photodiode; MOCVD growth; TDMAAs precursor

Indexed keywords

ABSORBING LAYERS; ACCEPTOR DOPANTS; ACCEPTOR DOPING; CONTACT LAYERS; DRIFT TIME; HGCDTE; HGCDTE PHOTODIODES; KEY FACTORS; METALORGANIC CHEMICAL VAPOUR DEPOSITION; MOCVD; MOCVD GROWTH; OPERATING TEMPERATURE; ORDER OF MAGNITUDE; P-TYPE; PHOTOVOLTAIC DETECTOR; RECOMBINATION CENTRES; RESPONSE TIME; REVERSE BIAS; TDMAAS PRECURSOR; TRANSIT TIME;

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); PHOTODIODES;

MERCURY COMPOUNDS;

EID: 79954988214 PISSN: 13504495 EISSN: None Source Type: Journal
DOI: 10.1016/j.infrared.2010.12.036 Document Type: Conference Paper

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.