On the origin of self-organization of SiO2 nanodots deposited by CVD enhanced by atmospheric pressure remote microplasma

Journal of Physics D: Applied Physics

Volumn 44, Issue 17, 2011, Pages

  Arnoult, G ^a   Belmonte, T ^a   Kosior, F ^a   Dossot, M ^b   Henrion, G ^a  

^a INSTITUT JEAN LAMOUR   (France)

^b Laboratoire de Chimie Physique et Microbiologie pour l'Environnement   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3D STRUCTURE; DEPOSITED FILMS; GAS TEMPERATURE; GROWTH MODES; HEXAGONAL CELLS; LOW TEMPERATURES; METALLIC OXIDES; METALLIC SURFACE; MICRO-PLASMAS; NANODOTS; NANOSTRUCTURED SILICA; OXIDIZED SILICON; OXIDIZING SPECIES; RAMAN ANALYSIS; SELF-ORGANIZATIONS; SILICA THIN FILMS; STAINLESS STEEL SUBSTRATES; THERMAL CAMERA; TREATMENT TIME; VOLMER-WEBER GROWTH MODE;

ATMOSPHERIC PRESSURE; FILM GROWTH; METALLIC COMPOUNDS; METALS; METAMATERIALS; NOZZLES; PLASMA DEVICES; POLYMER FILMS; SILICA; SILICON OXIDES; STAINLESS STEEL; THIN FILMS; VAPOR DEPOSITION;

LEAD OXIDE;

EID: 79954583609     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/17/174022     Document Type: Article

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