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Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

Atomically resolved silicon donor states of β-Ga2O 3

(5) Iwaya, K a Shimizu, R a Aida, H b Hashizume, T a,c Hitosugi, T a

a TOHOKU UNIVERSITY (Japan)

b Adamant Namiki Precision Jewel Co Ltd (Japan)

c HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY LENGTH; DONOR STATE; HIGH ELECTRICAL CONDUCTIVITY; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; SHALLOW DONORS; SPECTROSCOPIC FEATURES; SUBSURFACE LAYER; WIDE-GAP SEMICONDUCTOR;

CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STATES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTING SILICON;

EID: 79954551808 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3578195 Document Type: Article

Times cited : (32)

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