Amorphous and nanocrystalline silicon growth on carbon nanotube substrates

Thin Solid Films

Volumn 519, Issue 13, 2011, Pages 4144-4147

  Nguyen, Justin J ^a   Evanoff, Kara ^b   Ready, W Jud ^a  

^a GEORGIA TECH RESEARCH INSTITUTE   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

Amorphous silicon; Carbon nanotubes; Gamma regime; Nanocrystalline silicon; Plasma enhanced chemical vapor deposition (PECVD); Thin films

Indexed keywords

ACTIVE SURFACE AREA; AMORPHOUS AND NANOCRYSTALLINE SILICON; ENERGY APPLICATIONS; FOUR-POINT PROBE MEASUREMENTS; GAMMA REGIME; HIGH ENERGY; HYDROGENATED SILICON; LITHIUM-ION BATTERY; PENETRATION DEPTH; PHOTOVOLTAICS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); RADIO FREQUENCY PLASMA; UV-VIS SPECTROPHOTOMETRY;

AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; CARBON NANOTUBES; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LITHIUM; LITHIUM ALLOYS; LITHIUM COMPOUNDS; MEASUREMENTS; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

AMORPHOUS SILICON;

EID: 79954431248     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.243     Document Type: Article

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