Structural stability, electronic and optical properties of Ni-doped 3C-SiC by first principles calculation

Journal of Alloys and Compounds

Volumn 509, Issue 20, 2011, Pages 6117-6122

  Dou, Yankun ^a   Jin, Hai Bo ^a   Cao, Maosheng ^a   Fang, Xiaoyong ^b   Hou, Zhiling ^c   Li, Dan ^a   Agathopoulos, S ^d  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b YANSHAN UNIVERSITY   (China)

^c BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^d UNIVERSITY OF IOANNINA   (Greece)

Author keywords

Electronic property; First principle; Ni doped 3C SiC; Optical property

Indexed keywords

ABSORPTION EDGES; BAND GAPS; DIELECTRIC FUNCTIONS; ENERGY LEVEL; FAR-INFRARED REGIONS; FIRST PRINCIPLE; FIRST-PRINCIPLES CALCULATION; IMAGINARY PARTS; NEAR INFRARED REGION; NI-DOPED; NI-DOPED 3C-SIC; PHOTOABSORPTIONS; STRUCTURAL STABILITIES; SUB-LATTICES; ULTRAVIOLET REGION; VISIBLE REGION;

ABSORPTION; ABSORPTION SPECTROSCOPY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; SILICON CARBIDE; STABILITY;

OPTICAL PROPERTIES;

EID: 79954420889     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.03.058     Document Type: Article

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