First-principles studies of Ti impurities in SiC

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 726-729

  Barbosa, K O ^a   Machado, W V M ^a   Assali, L V C ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Ab initio methods; Silicon carbide; Transition metals

Indexed keywords

BONDING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; ELECTRONIC STRUCTURE; TITANIUM;

INTERSTITAL IMPURITIES;

SILICON CARBIDE;

EID: 0035669074     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00885-7     Document Type: Article

References (14)