Microwave synthesis of Al-doped SiC powders and study of their dielectric properties

Materials Research Bulletin

Volumn 45, Issue 2, 2010, Pages 247-250

  Jin, Hai bo ^a   Cao, Mao sheng ^a   Zhou, Wei ^a,b   Agathopoulos, Simeon ^c  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b HEBEI UNIVERSITY   (China)

^c UNIVERSITY OF IOANNINA   (Greece)

Author keywords

A. Carbides; A. Inorganic compounds; B. Chemical synthesis; C. X ray diffraction; D. Dielectric properties

Indexed keywords

A. CARBIDES; AL-DOPED SIC; C. X-RAY DIFFRACTION; CHEMICAL SYNTHESIS; D. DIELECTRIC PROPERTIES; FINE POWDERS; HIGH FREQUENCY; IMAGINARY PARTS; LOSS TANGENT; MICROWAVE SYNTHESIS; POLARIZATION LOSS; REAL PART; SECONDARY PHASIS; SIC AND AL; SIC POWDER;

ALUMINUM; COMPLEXATION; DIELECTRIC LOSSES; DIFFRACTION; DOPING (ADDITIVES); INORGANIC COMPOUNDS; MICROWAVES; PERMITTIVITY; SILICON CARBIDE; X RAY DIFFRACTION;

SYNTHESIS (CHEMICAL);

EID: 73449140075     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2009.09.015     Document Type: Article

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