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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 375, Issue 18, 2011, Pages 1898-1902

Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films

(6) Hu, P a Li, X Y a Lu, J Q a Yang, M a Lv, Q B a Li, S W a

a SUN YAT SEN UNIVERSITY (China)

Author keywords

Bipolar resistive switching; Heterojunction; Molecular beam epitaxy; Nonvolatile; Oxygen vacancy

Indexed keywords

COPPER OXIDES; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR OXYGEN; OXIDE FILMS; OXYGEN VACANCIES; STRONTIUM TITANATES; THIN FILMS; TITANIUM COMPOUNDS;

COPPER OXIDE THIN FILMS; CURRENT VOLTAGE; CURRENT VOLTAGE CURVE; NON-VOLATILE; OXYGEN DEFICIENCY EFFECTS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RESISTIVE SWITCHING; SWITCHING BEHAVIORS;

SULFUR COMPOUNDS;

EID: 79954420186 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2011.03.033 Document Type: Article

Times cited : (16)

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