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Volumn 96, Issue 4, 2010, Pages

Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; DOPING CONTROL; DOUBLE QUANTUM-WELL; FREE SURFACES; GATE VOLTAGES; INTEGRATED CHARGE; QUANTUM DOT; QUANTUM POINT CONTACT; SINGLE ELECTRON; SINGLE GATES;

EID: 75749104209     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3280368     Document Type: Article
Times cited : (7)

References (14)
  • 1
    • 0141749837 scopus 로고    scopus 로고
    • PLRAAN 1050-2947,. 10.1103/PhysRevA.57.120
    • D. Loss and D. P. DiVincenzo, Phys. Rev. A PLRAAN 1050-2947 57, 120 (1998). 10.1103/PhysRevA.57.120
    • (1998) Phys. Rev. A , vol.57 , pp. 120
    • Loss, D.1    Divincenzo, D.P.2
  • 10
    • 38549112902 scopus 로고    scopus 로고
    • Vertical quantum dot with a vertically coupled charge detector
    • DOI 10.1063/1.2830979
    • K. Zaitsu, Y. Kitamura, K. Ono, and S. Tarucha, Appl. Phys. Lett. APPLAB 0003-6951 92, 033101 (2008). 10.1063/1.2830979 (Pubitemid 351160633)
    • (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 033101
    • Zaitsu, K.1    Kitamura, Y.2    Ono, K.3    Tarucha, S.4
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.