SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 12, 2011, Pages

Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress

(8) Lin, Chia Sheng a Chen, Ying Chung a Chang, Ting Chang a,b Jian, Fu Yen c Li, Hung Wei c Chen, Yi Chuan a Chen, Te Chih a Tai, Ya Hsiang c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE CHANNEL LENGTH; HOLE TRAPPING; LIGHTLY DOPED DRAINS; LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; ON-CURRENTS; POSITIVE GATE BIAS; STRONG ELECTRIC FIELDS; SUBTHRESHOLD SWING; TCAD SOFTWARE; UNDER GATE;

ELECTRIC FIELDS; HOLE TRAPS; SILICON COMPOUNDS; SILICON OXIDES; THIN FILM TRANSISTORS;

ELECTRIC PROPERTIES;

EID: 79953844974 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3568895 Document Type: Article

Times cited : (5)

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