Effects of oxygen partial pressure on the electrical characteristics of InGaZnO thin film transistors

Journal of the Korean Physical Society

Volumn 54, Issue 1, 2009, Pages 121-126

  Moon, Yeon Keon ^a   Lee, Sih ^a   Park, Jong Wan ^a   Kim, Do Hyun ^b   Lee, Je Hun ^b   Jeong, Chang Oh ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Dc magnetron sputtering; Indium gallium zinc oxide; Oxide thin film transistor; Oxygen partial pressures

Indexed keywords

EID: 60049085321     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.121     Document Type: Article

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