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Journal of Materials Science

Volumn 46, Issue 12, 2011, Pages 4169-4175

Atomistic structure and energetics of interface between Mn-doped γ-Ga2O3 and MgAl2O4

(5) Hayashi, Hiroyuki a Huang, Rong b,c Oba, Fumiyasu a Hirayama, Tsukasa b Tanaka, Isao a,b

a KYOTO UNIVERSITY (Japan)

b JAPAN FINE CERAMICS CENTER (Japan)

c EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC STRUCTURE; CATION SITES; COHERENT INTERFACE; EPITAXIALLY GROWN; FIRST-PRINCIPLES CALCULATION; GALLIUM OXIDES; HAADF-STEM; HIGH QUALITY; HIGH-ANGLE ANNULAR DARK FIELDS; INTERFACIAL LAYER; LOCAL CONFIGURATIONS; MN-DOPED; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPINEL STRUCTURE; SUB-LATTICES; TETRAGONAL DISTORTION; TETRAGONALITY;

ALUMINUM; CALCULATIONS; GALLIUM; MANGANESE; PHASE INTERFACES; POSITIVE IONS; PULSED LASER DEPOSITION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79953798142 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-011-5313-2 Document Type: Conference Paper

Times cited : (11)

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