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Volumn 14, Issue 6, 2011, Pages

Electrical charging/discharging properties of organic memory device using cdse nanoparticles/PMMA blend as the tunneling layer

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CHARGE RETENTION; CHARGING/DISCHARGING; FABRICATION METHOD; GATE BIAS; HOLE TRAPPING; MEMORY WINDOW; ORGANIC MEMORIES; ORGANIC MEMORY DEVICES; SPIN-COATING PROCESS;

EID: 79953793455     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3564876     Document Type: Article
Times cited : (1)

References (20)
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    • S. R. Forrest, Nature, 428, 911 (2004). 10.1038/nature02498 (Pubitemid 38568095)
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    • Forrest, S.R.1
  • 3
    • 19744382387 scopus 로고    scopus 로고
    • 10.1557/mrs2004.237
    • Y. Yang, L. Ma, and J. Wu, MRS Bull., 29, 833 (2004). 10.1557/mrs2004.237
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    • Yang, Y.1    Ma, L.2    Wu, J.3
  • 10
    • 0345304916 scopus 로고    scopus 로고
    • A polymer/semiconductor write-once read-many-times memory
    • DOI 10.1038/nature02070
    • S. Mller, C. Perlov, W. Jackson, C. Taussig, and S. R. Forrest, Nature, 426, 166 (2003) 10.1038/nature02070 (Pubitemid 37442581)
    • (2003) Nature , vol.426 , Issue.6963 , pp. 166-169
    • Moller, S.1    Periov, C.2    Jackson, W.3    Taussig, C.4    Forrest, S.R.5
  • 14
    • 0038781593 scopus 로고    scopus 로고
    • Nanocrystal nonvolatile memory devices
    • DOI 10.1109/TNANO.2002.1005428
    • J. De Blauwe, IEEE Trans. Nanotechnol., 1, 72 (2002). 10.1109/TNANO.2002.1005428 (Pubitemid 43987437)
    • (2002) IEEE Transactions on Nanotechnology , vol.1 , Issue.1 , pp. 72-77
    • De Blauwe, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.