Schottky diode via dielectrophoretic assembly of reduced graphene oxide sheets between dissimilar metal contacts

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Islam, Muhammad R ^a,b   Joung, Daeha ^a,b   Khondaker, Saiful I ^a,b,c  

^a NanoScience Technology Center   (United States)

^b Department of Physics ^*  (United States)

^c University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; DIELECTROPHORETIC; DIELECTROPHORETIC ASSEMBLY; IDEALITY FACTORS; RECTIFICATION RATIO; RECTIFYING BEHAVIORS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TURN ON VOLTAGE;

DIELECTRIC DEVICES; DISSIMILAR METALS; DISTILLATION; ELECTRIC RECTIFIERS; GRAPHENE; OHMIC CONTACTS; PALLADIUM; SCHOTTKY BARRIER DIODES; TITANIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79953791589     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/3/035021     Document Type: Article

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