Fabrication and characteristics of GaN/AlGaN multilayer structure for terahertz quantum-cascade laser

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6373, Issue , 2006, Pages

  Wang, S C ^a   Soref, Richard ^b   Sun, Greg ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

Author keywords

AlGaN; MOCVD; Quantum cascade laser; TEM; XRD

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SOLID STATE LASERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MULTILAYER STRUCTURE; PHONON FREQUENCY; QUANTUM CASCADE LASERS (QCL); REDSHIFT;

MULTILAYERS;

EID: 33846198750     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.685678     Document Type: Conference Paper

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