Interface degradation of Al heavy wire bonds on power semiconductors during active power cycling measured by the shear test

2010 6th International Conference on Integrated Power Electronics Systems, CIPS 2010

Volumn , Issue , 2011, Pages

  Goehre, Jens ^a   Schneider Ramelow, Martin ^a   Geißler, Ute ^b   Lang, Klaus Dieter ^a  

^a FRAUNHOFER IZM   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE POWER; BOND WIRE; DEGRADATION PROCESS; INTERCONNECTION TECHNOLOGY; INTERFACE DEGRADATION; INTERFACE REGIONS; LIFE-TIMES; MEDIUM TEMPERATURE; NEW APPROACHES; NEW RESULTS; PHOTOVOLTAIC APPLICATIONS; POWER MODULE; POWER SEMICONDUCTORS; RESEARCH ACTIVITIES; SHEAR FORCE; SHEAR TESTS; TEMPERATURE AMPLITUDE; TEMPERATURE CYCLING; TEMPERATURE SWINGS; WIRE BONDING; WIRE BONDS;

AUTOMOBILE ELECTRONIC EQUIPMENT; CRACKS; DEGRADATION; ELECTRONICS PACKAGING; POWER ELECTRONICS;

WIRE;

EID: 79953757718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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