First principle study of Mg, Si and Mn co-doped GaN

Wuli Xuebao/Acta Physica Sinica

Volumn 58, Issue 1, 2009, Pages 450-458

  Xing, Hai Ying ^a   Fan, Guang Han ^a   Zhang, Yong ^a   Zhao, De Gang ^b  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Electronic structure; Mg, Si and Mn co doped GaN; Optical properties; TC

Indexed keywords

EID: 60649088457     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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