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Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution

(7) Voora, V M a Hofmann, T a Brandt, M b Lorenz, M b Ashkenov, N b Grundmann, M b Schubert, M a

a UNIVERSITY OF NEBRASKA LINCOLN (United States)

b UNIVERSITY OF LEIPZIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC INTERFACE; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL PROPERTY; HETEROSTRUCTURES; INTERFACE CHARGE; LAYER STRUCTURES; NEGATIVE BIAS; NONVOLATILE MEMORY DEVICES; PARALLEL POLARIZATION; POLARIZATION DRIFTS; SPACE CHARGE REGIONS; TRANSIENT CURRENT; ZNO; ZNO LAYERS;

BARIUM COMPOUNDS; CAPACITANCE; ELECTRIC POTENTIAL; HETEROJUNCTIONS; NONVOLATILE STORAGE; OPTICAL DEVICES; POLARIZATION; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; TOWERS;

ZINC OXIDE;

EID: 69649084541 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211914 Document Type: Article

Times cited : (25)

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