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Journal of Crystal Growth

Volumn 187, Issue 2, 1998, Pages 211-220

High crystalline quality CeO2 buffer layers epitaxied on (1 1 0 2) sapphire for YBa2Cu3O7 thin films

(5) Castel, X a Guilloux Viry, M a Perrin, A a Lesueur, J b Lalu, F b

a UNIVERSITÉ DE RENNES 1 (France)

b 91405 Orsay Campus (France)

Author keywords

(1 1 0 2)Al2O3 substrate; CeO2 buffer layer; Epitaxy; Pulsed laser deposition; Thin film growth; YBa2Cu3O7 thin film

Indexed keywords

ALUMINA; CERIUM COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; INTERFACES (MATERIALS); OSCILLATIONS; OXIDE SUPERCONDUCTORS; SAPPHIRE; SINGLE CRYSTALS; SUPERCONDUCTIVITY; YTTRIUM COMPOUNDS;

CERIA; FULL WIDTH AT HALF MAXIMUM (FWHM); LAUE OSCILLATIONS; YTTRIUM BARIUM COPPER OXIDE;

SUPERCONDUCTING FILMS;

EID: 0032074087 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00857-9 Document Type: Article

Times cited : (44)

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