Optimization of metal-assisted chemical etching process in fabrication of p-type silicon wire arrays

Current Applied Physics

Volumn 11, Issue 1 SUPPL., 2011, Pages

  Choi, Ho Jin ^a   Baek, Seongho ^a   Jang, Hwan Soo ^a   Kim, Seong Been ^a   Oh, Byeong Yun ^b   Kim, Jae Hyun ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

AgNO3 BOE solution; BOE H2O 2 solution; MCE; Silicon wire

Indexed keywords

AGNO3-BOE SOLUTION; BOE-H2O 2 SOLUTION; ETCH RATES; ETCHING PARAMETERS; ETCHING SOLUTIONS; ETCHING TIME; MCE; METAL CATALYST; METAL-ASSISTED CHEMICAL ETCHING; OPTIMIZATION CONDITIONS; P-TYPE SILICON; SEMICONDUCTOR TECHNOLOGY; SILICON ETCHING; SILICON WIRE; SILICON WIRES; WELL-ALIGNED;

CATALYSTS; FABRICATION; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EVAPORATION; WIRE;

ETCHING;

EID: 79953197517     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.11.047     Document Type: Conference Paper

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