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Volumn , Issue , 2010, Pages 62-65

Emerging memory technologies for reconfigurable routing in FPGA architecture

Author keywords

[No Author keywords available]

Indexed keywords

AREA SAVINGS; COMPLEX CIRCUITS; DELAY REDUCTION; ELEMENTARY CIRCUITS; FPGA ARCHITECTURES; MEMORY NODES; MEMORY TECHNOLOGY; NON-VOLATILE; ON-RESISTANCE; RE-CONFIGURABLE; SRAM MEMORIES; SWITCH BOX;

EID: 79953082323     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.2010.5724454     Document Type: Conference Paper
Times cited : (36)

References (17)
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    • S. Lai, "Compact status of the phase change memory and its future", IEDM Tech. Dig., 225-228 (2003)
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    • Lai, S.1
  • 2
    • 55449106208 scopus 로고    scopus 로고
    • Phase-change
    • random access memory: A scalable technology
    • S. Raoux et aI., "Phase-change random access memory: A scalable technology", IBM. J. Res. & Dev., 52(4/5) 465-479 (2008).
    • (2008) IBM. J. Res. & Dev. , vol.52 , Issue.4-5 , pp. 465-479
    • Raoux, S.1
  • 3
    • 68249102787 scopus 로고    scopus 로고
    • Nanosecond switching in GeTe phase change memory cells
    • G. Bruns et aI., "Nanosecond switching in GeTe phase change memory cells", Appl. Phys. Lett., 95, 043108 (2009).
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 043108
    • Bruns, G.1
  • 4
    • 77952370692 scopus 로고    scopus 로고
    • A 45nm Generation Phase Change Memory Technology
    • G.Servalli et aI., "A 45nm Generation Phase Change Memory Technology", Proc. IEDM Tech Dig, pp. 113-116, 2009.
    • (2009) Proc. IEDM Tech Dig , pp. 113-116
    • Servalli, G.1
  • 5
    • 46049090421 scopus 로고    scopus 로고
    • Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology
    • J.H. Oh et aI. , "Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology", IEDM Tech.Dig., p.49-52, 2006.
    • (2006) IEDM Tech.Dig. , pp. 49-52
    • Oh, J.H.1
  • 12
    • 54249155606 scopus 로고    scopus 로고
    • Phase-change memories
    • A.L. Lacaita et aI., "Phase-change memories", phys.stat.sol. (a) 205, No.10, 2281-2297 (2008).
    • (2008) Phys.stat.sol. (A) , vol.205 , Issue.10 , pp. 2281-2297
    • Lacaita, A.L.1
  • 13
    • 2042472664 scopus 로고    scopus 로고
    • 2009 Edition, International Technology Roadmap for Semiconductors
    • Executive Summary, 2009 Edition, International Technology Roadmap for Semiconductors.
    • Executive Summary
  • 14
    • 79953101784 scopus 로고    scopus 로고
    • http://cadlab.cs.ucla.edu/~kirill/
  • 15
    • 79953110806 scopus 로고    scopus 로고
    • http://www.eecs.berkeley.edu/~alanmi/abc/
  • 16
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    • http://www.eecg.utoronto.ca/vpr/
  • 17
    • 47249095732 scopus 로고    scopus 로고
    • An Integrated Phase Change Memory Cell with Ge Nanowire Diode for Cross-Point Memory
    • Y. Zhang et al. "An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory", IEEE Symp. on VLSI Tech., 2007
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    • Zhang, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.