Influence of assistant ion beam on the opto-electrical properties of molybdenum doped zinc oxide films deposited on polyethersulfone via dual ion beam sputtering

Vacuum

Volumn 85, Issue 10, 2011, Pages 961-967

  Kuo, Chin Chiuan ^a   Liu, Chi Chang ^a   He, Shao Chih ^b   Chang, Jing Tang ^b   He, Ju Liang ^b  

^a CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Electrical conductivity; Ion beam assisted deposition; Molybdenum doped zinc oxide; Optical properties

Indexed keywords

APPLIED VOLTAGES; ARGON ION BEAM; DISCHARGE CURRENTS; DISCHARGE VOLTAGES; DUAL ION BEAM SPUTTERING; DUAL ION BEAM SPUTTERING SYSTEMS; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; FILM CRYSTALLINITY; ION SOURCE DISCHARGE; OPTICAL TRANSPARENCY; POLYETHERSULFONES; TRANSPARENT CONDUCTIVE OXIDES;

BEAM PLASMA INTERACTIONS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; GRAIN REFINEMENT; ION BEAM ASSISTED DEPOSITION; ION BEAMS; ION BOMBARDMENT; ION SOURCES; IONS; MOLYBDENUM; MOLYBDENUM OXIDE; OPTICAL PROPERTIES; SUPERCONDUCTING FILMS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79953036438     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.01.018     Document Type: Article

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