Chemical shifts and optical properties of tin oxide films grown by a reactive ion assisted deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 359-366

  Choi, Won Kook ^a   Jung, Hyung Jin ^a   Koh, Seok Keun ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; DEPOSITION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; GLASS; REFRACTIVE INDEX; SEMICONDUCTING TIN COMPOUNDS; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER PEAKS; CHEMICAL SHIFT; KINETIC ENERGY; REACTIVE ION ASSISTED DEPOSITION; TIN OXIDE FILMS;

FILM GROWTH;

EID: 0030109022     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.579901     Document Type: Article

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