Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

Thin Solid Films

Volumn 516, Issue 16, 2008, Pages 5612-5617

  Kuo, C C ^a   Liu, C C ^a   Lin, C C ^b   Liou, Y Y ^c   He, J L ^d   Chen, F S ^e  

^a CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^b Plastics Industry Development Center Taichung   (Taiwan)

^c Chien Kuo Univ of Sci and Technol   (Taiwan)

^d FENG CHIA UNIVERSITY   (Taiwan)

^e NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Hall mobility; Indium molybdenum oxide (IMO); Ion beam discharge voltage; Ion beam assisted evaporation (IBAE) deposition; Resistivity

Indexed keywords

ELECTRIC CONDUCTIVITY; EVAPORATION; FLOW OF GASES; FLOW RATE; HALL MOBILITY; INDIUM COMPOUNDS; ION BEAM ASSISTED DEPOSITION; ION BOMBARDMENT; OXYGEN; SURFACE ROUGHNESS;

INDIUM MOLYBDENUM OXIDES; ION BEAM DISCHARGE VOLTAGE; ION BEAM PLASMA CONDITIONS; OPTOELECTRONIC PROPERTIES; PREFERRED ORIENTATION;

OXIDE FILMS;

EID: 43949137220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.111     Document Type: Article

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