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Applied Physics A: Materials Science and Processing

Volumn 103, Issue 1, 2011, Pages 33-42

Burstein-Moss shift and room temperature near-band-edge luminescence in lithium-doped zinc oxide

(2) Yogamalar, N Rajeswari a Chandra Bose, A a

a NATIONAL INSTITUTE OF TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PERCENT; BLUE EMISSION; BURSTEIN-MOSS SHIFT; DEBYE-SCHERRER FORMULA; DEFECT-FREE; DOPED ZNO; EMISSION PEAKS; FT-IR SPECTRUM; HYDROTHERMAL METHODS; LITHIUM IONS; LOW TEMPERATURES; METAL-OXIDE; NANO POWDERS; NEAR BAND EDGE; NEAR BAND EDGE EMISSIONS; OPTICAL ABSORPTION MEASUREMENT; OPTICAL BAND GAP ENERGY; PEAK SHIFT; PL SPECTRA; ROD-SHAPED; ROOM TEMPERATURE; TEM IMAGES; UNIT CELLS; VEGARD'S LAW; WILLIAMSON-HALL; XRD; ZNO; ZNO NANOSTRUCTURES;

CRYSTALLITE SIZE; DOPING (ADDITIVES); ENERGY GAP; LITHIUM; LUMINESCENCE; NANOSTRUCTURED MATERIALS; OPTICAL BAND GAPS; ZINC;

ZINC OXIDE;

EID: 79953020885 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6304-5 Document Type: Article

Times cited : (133)

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