The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

Diamond and Related Materials

Volumn 16, Issue 8, 2007, Pages 1459-1462

  Saguy, C ^a   Kalish, R ^a   Chevallier, J ^b   Jomard, F ^b   Cytermann, C ^a   Philosoph, B ^a   Kociniewski, T ^b   Ballutaud, D ^b   Baron, C ^c   Deneuville, A ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b Centre National de la Recherche Scientifique   (France)

^c CNRS   (France)

Author keywords

Defects; Doping; Electrical properties; Hydrogen passivation

Indexed keywords

CRYSTAL DEFECTS; DEUTERIUM; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; THERMODYNAMIC STABILITY;

BORON-DOPED DIAMOND; HOMOEPITAXIAL GROWTH; SURFACE EFFECT;

DIAMONDS;

EID: 34249001316     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.12.007     Document Type: Article

References (11)

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