Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials

Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

  Peng, Chao ^a   Zhang, Haoxiang ^a   Stavola, Michael ^a   Yelundur, Vijay ^b   Rohatgi, Ajeet ^b   Carnel, Lode ^c   Seacrist, Mike ^d   Kalejs, Juris ^e  

^a LEHIGH UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c REC Wafer AS   (Norway)

^d MEMC Electronic Materials Inc   (United States)

^e American Capital Energy   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON CONCENTRATIONS; CARBON IMPURITIES; CELL EFFICIENCY; DELETERIOUS EFFECTS; H-RELATED DEFECTS; IR SPECTROSCOPY; MULTICRYSTALLINE SI; PENETRATION DEPTH; POST DEPOSITION ANNEALING; SI SOLAR CELLS; SOLAR CELL MATERIALS;

CRYSTAL ATOMIC STRUCTURE; DEFECTS; HYDROGEN; POLYSILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SOLAR CELLS;

SOLAR POWER GENERATION;

EID: 79952995925     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561367     Document Type: Article

References (38)

1. G. Hahn and A. Schnecker, J. Phys.: Condens. Matter 16, R1615 (2004). 10.1088/0953-8984/16/50/R03 (Pubitemid 40025645)
2. T. Buonassisi, A. A. Istratov, M. D. Pickett, M. Heuer, J. P. Kalejs, G. Hahn, M. A. Marcus, B. Lai, Z. Cai, S. M. Heald, T. F. Ciszek, R. F. Clark, D. W. Cunningham, A. M. Gabor, R. Joncyk, S. Narayanan, E. Sauar, and E. R. Weber, Prog. Photovoltaics 14, 513 (2006). 10.1002/pip.v14:6
3. N. Stoddard, B. Wu, L. Maisano, R. Russell, J. Creager, R. Clark, and J. M. Fernandez, in Proceedings of the 18th Workshop on Crystalline Silcon Solar Cells and Modules, Vail, CO, Aug. 3-6, 2008, p. 7.
4. G. Davies and R. C. Newman, in Handbook on Semiconductors, Vol. 3B, Materials, Properties, and Preparation., edited by, S. Mahajan and, T. S. Moss, (North-Holland, Amsterdam, 1994), p. 1557.
5. J. Hanoka, C. H. Seager, D. J. Sharp, and J. K. G. Panitz, Appl. Phys. Lett. 42, 618 (1983). 10.1063/1.94022
6. A. G. Aberle, Sol. Energy Mater. Sol. Cells 65, 239 (2001) (reviews the SiNx passivation of c-Si solar cells and includes a historical overview). 10.1016/S0927-0248(00)00099-4
7. F. Duerinckx and J. Szlufcik, Sol. Energy Mater. Sol. Cells 72, 231 (2002). 10.1016/S0927-0248(01)00170-2 (Pubitemid 34181863)
8. A. Cuevas, M. J. Kerr, and J. Schmidt, in Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, IEEE Cat. No. 03CH37497, Part 1 (Arisumi Printing Inc., Japan, 2003), p. 913.
9. H. F. W. Dekkers, Ph.D. dissertation, Catholic University of Leuven, 2008.
10. N. Fukata and M. Suezawa, J. Appl. Phys. 87, 8361 (2000). 10.1063/1.373548
11. V. P. Markevich, L. I. Murin, J. Hermansson, M. Kleverman, J. L. Lindstrm, N. Fukata, and M. Suezawa, Physica B 302-303, 220 (2001).
12. B. Hourahine, R. Jones, S. berg, P. R. Briddon, V. P. Markevich, R. C. Newman, J. Hermansson, M. Kleverman, J. L. Lindstrm, L. I. Murin, N. Fukata, and M. Suezawa, Physica B 308-310, 197 (2001).
13. J. L. McAfee and S. K. Estreicher, Physica B 340-342, 637 (2003).
14. E. V. Lavrov, L. Hoffmann, B. Bech Nielsen, B. Hourahine, R. Jones, S. berg, and P. R. Briddon, Phys. Rev. B 62, 12859 (2000). 10.1103/PhysRevB.62. 12859 (Pubitemid 32322396)
15. M. Stavola, in Identification of Defects in Semiconductors, Semiconductors and Semimetals, Vol. 51B, edited by, M. Stavola, (Academic, Boston, 1991), p. 153.
16. I. A. Veloarisoa, M. Stavola, D. M. Kozuch, R. E. Peale, and G. D. Watkins, Appl. Phys. Lett. 59, 2121 (1991). 10.1063/1.106099
17. A. Rohatgi, D. S. Kim, K. Nakayashiki, V. Yelundur, and B. Rounsaville, Appl. Phys. Lett. 84, 145 (2004). 10.1063/1.1638636
18. S. J. Pearton, Properties of Crystalline Si, edited by R. Hull (INSPEC, London, 1999), p. 503.
19. R. E. Pritchard, M. J. Ashwin, J. H. Tucker, and R. C. Newman, Phys. Rev. B 57, 15048 (1998). 10.1103/PhysRevB.57.R15048
20. A. W. R. Leitch, V. Alex, and J. Weber, Phys. Rev. Lett. 81, 421 (1998). 10.1103/PhysRevLett.81.421
21. E E. Chen, M. Stavola, W. B. Fowler, and P. Walters, Phys. Rev. Lett. 88, 105507 (2002). 10.1103/PhysRevLett.88.105507
22. M. Stavola, E E. Chen, W. B. Fowler, and G. A. Shi, Physica B 340-342, 39 (2003).
23. M. Stavola, S. J. Pearton, J. Lopata, and W. C. Dautremont-Smith, Appl. Phys. Lett. 50, 1086 (1987). 10.1063/1.97978
24. J. N. Heyman, J. W. Ager, E. E. Haller, N. M. Johnson, J. Walker, and C. M. Doland, Phys. Rev. B 45, 13363 (1992). 10.1103/PhysRevB.45.13363
25. E. V. Lavrov and J. Weber, Phys. Rev. B 87, 185502 (2001). 10.1103/PhysRevLett.87.185502
26. B. Bech Nielsen, L. Hoffman, M. Budde, R. Jones, J. Goss, and S. berg, Mater. Sci. Forum 196-201, 933 (1995).
27. F. Jiang, M. Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, and J. Kalejs, Appl. Phys. Lett. 83, 931 (2003). 10.1063/1.1598643
28. S. Kleekajai, F. Jiang, M. Stavola, V. Yelundur, K. Nakayashiki, A. Rohatgi, G. Hahn, S. Seren, and J. Kalejs, J. Appl. Phys. 100, 093517 (2006). 10.1063/1.2363684 (Pubitemid 44773697)
29. S. Kleekajai, L. Wen, C. Peng, M. Stavola, V. Yelundur, K. Nakayashiki, A. Rohatgi, and J. Kalejs, J. Appl. Phys. 106, 123510 (2009). 10.1063/1.3267317
30. Hydrogen could be detected by SIMS in mc-Si samples containing a high concentration of O precipitates. See, G. Hahn, D. Karg, A. Schnecker, A. R. Burgers, R. Ginige, and K. Cherkaoui, in Proceedings of the 31st IEEE Photovoltaic Specialist Conference, IEEE Cat. No. 05CH37608 (IEEE Electron Devices Soc., Piscataway, NJ, 2005), p. 1035;
31. G. Hahn, A. Schnecker, A. R. Burgers, R. Ginige, K. Cherkaoui, and D. Karg, in Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, 2005 (WIP-Renewable Energies, Munich, 2005), p. 717.
32. SP, the absorbance for a single pass of the probing light through the sample at normal incidence, is the absorbance measured in an MIR experiment divided by N sec()
33. A. Van Wieringen and N. Warmoltz, Physica 22, 849 (1956). 10.1016/S0031-8914(56)90039-8
34. R. C. Newman, R. E. Pritchard, J. H. Tucker, and E. C. Lightowlers, Phys. Rev. B 60, 12775 (1999). 10.1103/PhysRevB.60.12775
35. S. A. McQuaid, M. J. Binns, R. C. Newman, E. C. Lightowlers, and J. B. Clegg, Appl. Phys. Lett. 62, 1612 (1993). 10.1063/1.108602
36. M. J. Binns, R. C. Newman, S. A. McQuaid, and E. C. Lightowlers, Mater. Sci. Forum 143-147, 861 (1994).
37. M. Stavola, Properties of Crystalline Si, edited by, R. Hull, (INSPEC, London, 1999), p. 511.
38. L. Hoffman, E. V. Lavrov, and B. Bech Nielsen, Mater. Sci. Eng., B 58, 167 (1999). 10.1016/S0921-5107(98)00294-3