Evidence for H*2 trapped by carbon impurities in silicon

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 197-201

  Hourahine, B ^a   Jones, R ^a   Oberg S ^b   Briddon, P R ^a,c   Markevich, V P ^a,d,e   Newman, R C ^a,f   Hermansson, J ^b,g   Kleverman, M ^b,g   Lindstrom J L ^b,e   Murin, L I ^e   Fukata, N ^h   Suezawa, M ^h  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^f IMPERIAL COLLEGE LONDON   (United Kingdom)

^g LUND UNIVERSITY   (Sweden)

^h TOHOKU UNIVERSITY   (Japan)

Author keywords

Absorption bands; Carbon; Hydrogen; Impurity complexes; Silicon

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION; HYDROGEN; SPECTROSCOPIC ANALYSIS;

LOCAL MODE SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0035671565     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00719-0     Document Type: Article

References (17)