SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 167-170

C-H complex in Si observed at low temperatures

(3) Hoffmann, L a Lavrov, E V a,b Bech Nielsen, B a

a AARHUS UNIVERSITY (Denmark)

b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CARBON; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; HYDROGEN; HYDROGEN BONDS; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; POINT DEFECTS; PROTONS;

PROTON IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0345072504 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00294-3 Document Type: Article

Times cited : (7)

References (10)

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